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THERMAL CONSIDERATIONS
When a transistor (a semiconductor device) supplying the desired current has a voltage across it, it dissipates power in the form of heat. The heat is generated at its junction (wafer) and must flow through its package (casing) to the surrounding air. First of all the heat has to flow from the junction inside the transistor package to its outer surface. The transistor package offers some opposition to the heat flow. We label it as the thermal resistance from the junction-to-case qJC). When the case temperature is higher than its surrounding medium (air) and there is nothing else involved in the heat-transfer process, then the thermal gradient forces the heat to flow from the case to the surrounding air. The thermal resistance introduced during this process by the heat flow from the case-to-air is labeled as qCA In fact, the manufacturer of the device provides the total thermal resistance from the junction-to-air as qJA. As you may have realized that
qJA qJC + qCA
If the ambient temperature (TA) and the power dissipation by the transistor (PD) are known, we compute the junction temperature (TJ) as
(11.1)
The manufacturer usually specifies the maximum junction temperature. If the junction temperature as computed using (11.1) is less than the maximum junction temperature TJ,MAX as specified by the manufacturer, then the device is expected to perform safely as approved by its manufacturer.
The manufacturer also specifies the maximum power a device can dissipate at room temperature (usually 25 C). The power rating of the device remains at its maximum as long as the operating temperature is lower than or equal to 25 C. As the ambient temperature increases, the power rating of the device decreases.
Let us suppose that a transistor is rated at 5 W at a room temperature of 25 C, its junction-to-air thermal resistance is qJA C/W, and its maximum junction temperature is 200 C. This simply means that the transistor can safely dissipate 5 W when the ambient temperature is less than or equal to 25 C. In addition, when it is dissipating power its junction temperature should be less than or at the most equal to 200 C for safe operation. As the transistor dissipates power, it junction temperature rises in accordance with (11.1).
For example, when the room temperature is 25 C, the junction temperature becomes 60 C when it dissipates 1 W. The junction temperature rises to 95 C as it dissipates 2 W. In other words, the junction temperature rises 35 C above the ambient temperature for each watt of power dissipated by the transistor. Finally, the junction temperature reaches 200 C as the transistor dissipates 5 W at a room temperature of 25 C.
What we have just stated can also be stated in the following way. If the ambient temperature is already at 60 C, the transistor can only dissipate 4 W of power. Likewise, if the ambient temperature is already at 95 C, the transistor can only dissipate 3 W of power. In the end when the ambient temperature reaches 200 C, the transistor cannot safely dissipate any power at all. Simply put, as the ambient temperature rises, the power dissipation capability of the transistor decreases. This decrease in power rating is sketched in Figure 11.1. The curve is usually called the derating curve of the device (transistor in our example).
When the manufacturer of the device does not provide any information on its thermal resistance, the manufacturer then supplies the necessary derating curve of the transistor.
A low-power germanium transistor has a thermal (junction-to-air) resistance of 0.5 C/mW and its maximum allowable temperature is 85 C. Determine the amount of power it can safely dissipate when the room temperature is (a) 25 C, and (b) 60 C.
Solution:
(a) From (11.2), the permissible power dissipation by the transistor at an ambient temperature of 25 C is
(b) When the ambient temperature is 60 C, the maximum power dissipation capability of the transistor is
Once again, this example shows that the increase in the ambient temperature limits the amount of power that a transistor can safely dissipate.
DERATE FACTOR
It is also common to express the power dissipation capability of a device (especially for a low power device) in terms of the derate factor. The derate factor is simply the inverse of the thermal resistance. For low power devices, it is usually given in terms of mW/ C. It stresses the fact that as the temperature increases beyond the specified ambient temperature of the device, its maximum power rating must be reduced in accordance with its derate factor. For the transistor data given in Example-2, the derate factor is 2 mW/ C (1 qJA). It simply means that for every one-degree increase in the ambient temperature of the transistor, its power rating goes down by 2 mW. Thus, when the ambient temperature reaches 60 C, the maximum power rating of the transistor would be
= 120 (2)(60 - 25) = 50 mW
Although the transistor is rated at 120 mW at 25 C, it must be derated to 50 mW at 60 C. The maximum power it can safely dissipate at the ambient temperature of 60 C is 50 mW.
When the device (such as a transistor) is mounted on the heat sink, the heat flows from the junction of the device to its case, then from the case to the heat sink through the insulator, and finally from the heat sink to the surrounding air. Base upon this understanding, we can develop an equivalent thermal model of the device as shown in Figure 11.3.
Figure 11.3: Thermal Model of a device including insulator and heat sink
In the thermal model of Figure 11.3 PD is the power being dissipated by the device, TJ is the junction temperature, TC is the case temperature, TS is the heat sink temperature, and TA is the ambient temperature. In addition, qJC is the junction-to-case thermal resistance of the device, qCS is the case-to-sink thermal resistance of the insulator, and qSA is the thermal resistance from sink-to-air of the heat sink. From the thermal model of Figure 11.3, it is clear that the temperature of the junction with respect to the case is
(11.3)
Likewise, the temperature of the case with respect to the ambient is
(11.4)
Finally, we can express the junction temperature in terms of the ambient temperature as
(11.5)
Equation (11.4) is useful when the manufacturer of the device specifies the maximum allowable case temperature. This is done with an understanding that when the case temperature is below the maximum specified limit, the junction temperature would automatically be below its maximum limit. In this case, we dont have to compute the junction temperature. The device will operate safely as long as the case temperature is maintained below its maximum specified value.
The maximum case temperature of a 10-W power diode is specified as 110 C. Its junction-to-case thermal resistance is 3 C/W. It is mounted on a heat sink with a thermal resistance of 8.5 C/W. The insulator has a thermal resistance of 0.5 C/W. The forward voltage drop across the diode is 0.8 V. Determine the maximum current the diode can safely carry when the ambient temperature is 45 C. Also compute its junction temperature.
Solution:
Since we have to abide by the temperature limit on the case of the diode, we use (11.4) for our calculation. Although the diode is rated at 10-W, it may not be able to dissipate 10-W of power for the given heat sink and the insulator. We can determine the maximum power that the diode can dissipate using (11.4). If the maximum power as computed from (11.4) is higher than 10-W, the current calculations can then be based upon its power dissipation capability of 10 W. If the maximum power as computed from (11.4) is less than 10 W, then we should use the computed power to determine the maximum current carrying capability of the diode.
The safe limit on the power based on (11.4) is
Since PD is less than 10 W, the maximum limit on the power dissipation by the diode is 7.22 W. Therefore, the maximum current carrying capability of the diode is
The diodes operation is safe as long as the ambient temperature is less than or equal to 45 C and its current is less than or equal to about 9 A.
When the case is at its maximum temperature of 110 C, we can compute the junction temperature using (11.3). That is
Select another heat sink that would enable the diode in Example-3 to dissipate its rated power of 10 W.
Solution: From (11.4), we obtain
When we use the same insulator, the maximum thermal resistance of the heat sink should be
We can select a heat sink that is compatible with the diode from Table-2. The thermal resistance of the heat sink must be less than or equal to 6 C/W. The #20 heat sink appears to satisfy our requirement. We can use it as long as the diode can be easily mounted on it.
Typical data on an RCA-40322 power transistor is given in Table-11.3. The transistor is used as a power amplifier for class-B configuration. The transistor has to dissipate 10 W of power. (a) Select a heat sink based upon its maximum junction temperature. (b) Select the heat sink if the amplifier is a part of missile-flight system. Assume that the ambient temperature is 50 C.
Solution:
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